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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths 25