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SEMICONDUCTOR KTC5027F
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1100 V
Collector-Emitter Voltage VCEO 800 V
Emitter-Base Voltage VEBO 7 V
DC IC 3
Collector Current A
Pulse ICP 10
Base Current IB 1.5 A
Collector Power Dissipation
PC 40 W
(Tc=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=800V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
IC=1.5A, IB1=-IB2=0.3A
Collector-Emitter Sustaning Voltage VCEX(SUS) 800 - - V
L=2mH, Clamped
Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 2 V
Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A - - 1.5 V
hFE (1) (Note) VCE=5V, IC=0.2A 15 - 40
DC Current Gain
hFE (2) VCE=5V, IC=1A 8 - -
Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 1100 - - V
Collector-Emitter Breakdown Voltage BVCEO IC=5mA, RBE= 800 - - V
Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 - - V
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 60 - pF
Transition Frequency fT VCE=10V, IC=0.2A - 15 - MHz
OUTPUT
Turn On Time ton 20