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CXT5401
TRANSISTOR (PNP)
SOT-89
FEATURE
Switching and amplification in high voltage
Applications such as telephony 1. BASE
Low current(max. 500mA) 1 1
High voltage(max.160v) 2. COLLECTOR 2
2
3
3. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE = -10A, IC=0 -5 V
Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA
Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA
hFE(1) VCE= -5V, IC=-1 mA 50
DC current gain hFE(2) VCE= -5V, IC= -10 mA 60 300
hFE(3) VCE= -5V, IC=-50 mA 50
VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V
Collector-emitter saturation voltage
VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V
VBE(sat) IC= -10 mA, IB= -1 mA -1 V
Base-emitter saturation voltage
VBE(sat) IC= -50 mA, IB= -5 mA -1 V
VCE= -10V, IC= -10mA,
Transition frequency fT 100 300 MHz
f = 100MHz
Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 pF
VCE= -5.0V, IC= -200A,
Noise Figure NF RS= 10,f =10Hz to15.7kHz 8 dB
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
CXT5401
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05