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STP4NB30
STP4NB30FP
N-CHANNEL 300V - 1.8 - 4A - TO-220/TO-220FP
PowerMeshTM MOSFET

TYPE VDSS RDS(on) ID

STP4NB30 300 V <2 4A
STP4NB30FP 300 V <2 4A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
2 2
s NEW HIGH VOLTAGE BENCHMARK 1 1
s GATE CHARGE MINIMIZED
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER
ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NB30 STP4NB30FP
VDS Drain-source Voltage (VGS = 0) 300 V
VDGR Drain-gate Voltage (RGS = 20 k) 300 V
VGS Gate- source Voltage