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PMK35EP
P-channel TrenchMOS extremely low level FET
Rev. 02 -- 29 April 2010 Product data sheet

1. Product profile

1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Low conduction losses due to low
on-state resistance

1.3 Applications
Battery management Load switching

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source 25