Text preview for : hn1b04f_071122.pdf part of Toshiba hn1b04f 071122 . Electronic Components Datasheets Active components Transistors Toshiba hn1b04f_071122.pdf



Back to : hn1b04f_071122.pdf | Home

HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)


HN1B04F
Audio Frequency General Purpose Amplifier Applications Unit: mm

Driver Stage Amplifier Applications
Switching application

Q1:
Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = -6V, IC = -400mA

Q2:
Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = 6V, IC = 400mA


1.EMITTER1 (E1)
Q1 Absolute Maximum Ratings (Ta = 25