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Si4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.022 @ VGS = 10 V 7.5
30
0.030 @ VGS = 4.5 V 6.5
SCHOTTKY PRODUCT SUMMARY
VSD (v)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
D1 D1 D2 D2
SO-8
S1 1 8 D1
G1 2 7 D1 Schottky Diode
G1 G2
S2 3 6 D2
G2 4 5 D2
Top View
S1 S2
Ordering Information: Si4834DY
Si4834DY-T1 (with Tape and Reel)
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 7.5 5.7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 6.0 4.6
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25_C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70_C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t v 10 sec 52 62.5 53 62.5
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady-State 93 110 93 110 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJC 35 40 35 40
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 1
Si4834DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Ch 1
Ch-1 100
VDS = 24 V, VGS = 0 V
V
Ch-2 1
Zero Gate Voltage Drain Current IDSS mA
Ch 1
Ch-1 2000
VDS = 24 V, VGS = 0 V TJ = 85_C
V V,
Ch-2 15
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 7.5 A 0.018 0.022
Drain Source On State Resistanceb
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 6.5 A 0.024 0.030
Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 22 S
Ch 1
Ch-1 0.47 0.5
Diode Forward Voltageb VSD IS = 1 A VGS = 0 V
A, V
Ch-2 0.8 1.2
Dynamica
Total Gate Charge Qg 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A
, , 2 nC
Gate-Drain Charge Qgd 2.7
Gate Resistance Rg 0.5 1.9 3.2 W
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 15 V, RL = 15 W 10 20
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 21 40
ns
Fall Time tf 10 20
Ch 1
Ch-1 32 70
Source-Drain
Source Drain Reverse Recovery Time trr IF = 1 7 A di/dt = 100 A/ms
1.7 A,
Ch-2 40 80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF V
IF = 1.0 A, TJ = 125_C 0.36 0.42
Vr = 30 V 0.004 0.100
Maximum Reverse Leakage Current
g Irm Vr = 30 V, TJ = 100_C 0.7 10 mA
Vr = - 30 V, TJ = 125_C 3.0 20
Junction Capacitance CT Vr = 10 V 50 pF
www.vishay.com Document Number: 71183
2 S-31062--Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Output Characteristics Transfer Characteristics
20 20
VGS = 10 thru 4 V 3V
16 16
I D - Drain Current (A)
I D - Drain Current (A)
12 12
8 8
TC = 125_C
4 4
2V 25_C
- 55_C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1000
r DS(on) - On-Resistance ( W )
0.032 800
C - Capacitance (pF)
Ciss
VGS = 4.5 V
0.024 600
VGS = 10 V
0.016 400
Coss
0.008 200 Crss
0.000 0
0 4 8 12 16 20 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7.5 A ID = 7.5 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 3
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.04
TJ = 150_C ID = 7.5 A
r DS(on) - On-Resistance ( W )
10
0.03
I S - Source Current (A)
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 mA
V GS(th) Variance (V)
- 0.0
30
Power (W)
- 0.2
20
- 0.4
10
- 0.6
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 10 -3 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71183
4 S-31062--Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
20
10
10
TJ = 150_C
I R - Reverse Current (mA)
I F - Forward Current (A)
1
0.1 30 V
TJ = 25_C
24 V
0.01
0.001
0.0001 1
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Temperature (_C) VF - Forward Voltage Drop (V)
Capacitance
200
160
C - Capacitance (pF)
120
80
Coss
40
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1