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SEMICONDUCTOR KU2303D
TECHNICAL DATA N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
A K DIM MILLIMETERS
characteristics. It is mainly suitable for DC/DC Converter. C D L
A _
6.60 + 0.20
B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
FEATURES F _
2.30 + 0.10
G 0.96 MAX
VDSS=30V, ID=68A. H 0.90 MAX
H
J J _
1.80 + 0.20
Low Drain to Source On-state Resistance. E
_
G N K 2.30 + 0.10
: RDS(ON)=6.8m (Max.) @ VGS=10V L _
0.50 + 0.10
F F M M _
0.50 + 0.10
: RDS(ON)=13.2m (Max.) @ VGS=4.5V N 0.70 MIN
O 0.1 MAX

1 2 3 1. GATE
2. DRAIN
3. SOURCE
O

MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC SYMBOL RATING UNIT DPAK (1)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS