Text preview for : 2sc3587.pdf part of NEC 2sc3587 . Electronic Components Datasheets Active components Transistors NEC 2sc3587.pdf
Back to : 2sc3587.pdf | Home
DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and E
3.8 MIN.
has a wide dynamic range.
0.5