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Philips Semiconductors Product specification
PowerMOS transistor BUK464-60H
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 60 V
mount applications. ID Drain current (DC) 41 A
The device is intended for use in Ptot Total power dissipation 125 W
automotive and general purpose Tj Junction temperature 175