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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/498

Devices Qualified Level
JAN
2N6306 2N6308 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6306 2N6308 Units
Collector-Emitter Voltage VCEO 250 350 Vdc
Collector-Base Voltage VCBO 500 700 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Collector Current IC 8.0 Adc
Base Current IB 4.0 Adc
Total Power Dissipation @ TC = +250C (1) 125 W
PT
@ TC = +1000C (1) 62.5 W
Operating & Storage Temperature Range 0
Top, Tstg -65 to +200 C TO-3 (TO-204AA)*
1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 mAdc 2N6306 V(BR)CEO 250 Vdc
2N6308 350
Collector-Emitter Cutoff Current
VCE = 500 Vdc; VBE = 1.5 Vdc 2N6306 ICEX 5.0