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SMG2310N
2.2A, 30V, RDS(ON) 65 m
Elektronische Bauelemente N-Channel Enhancement Mode MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free

DESCRIPTION SC-59
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and A
L
conserves energy, making this device ideal for use in power 3
3
management circuitry. Typical applications are lower voltage Top View C B
application, power management in portable and battery-powered 1
1 2
products such as computers, printers, PCMCIA cards, cellular and K E 2

cordless telephones.
D
FEATURES F G H J
Low RDS(on) provides higher efficiency and extends
battery life. Millimeter Millimeter
REF. REF.
Low gate charge Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
Fast switch B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
PACKAGE INFORMATION F 0.35 0.50

Package MPQ LeaderSize
SC-59 3K 7' inch

ABSOLUTE MAXIMUM RATINGS (TA = 25