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SEMICONDUCTOR KMA2D7DP20X
TECHNICAL DATA Dual P-CH Trench MOSFET
General Description
It's mainly suitable for use as a load switch in
battery powered applications.
A
G
FEATURES
6 4 C
VDSS=-20V, ID=-2.7A.
F1 F
B1 B
Drain-Source ON Resistance.
: RDS(ON)=100m (Max.) @ VGS=-4.5V. 1 3
: RDS(ON)=175m (Max.) @ VGS=-2.5V. DIM MILLIMETERS
A _
3.05 + 0.1
E
B _
2.85 + 0.15
B1 _
1.65 + 0.1
C _
0.15 + 0.05
D _
1.0 + 0.1
D1 _
0.95 + 0.05
D1 D D2 0.1 MAX
E 0.45MAX
D2 0.6 MAX
F
F1 0.60 Ref.
1.0
MAXIMUM RATING (Ta=25 ) G
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -20 V TSOP-6
Gate-Source Voltage VGSS 12 V
DC ID * -2.7
Drain Current A
Pulsed IDP* -8
Ta=25 2.1
Drain Power Dissipation PD * W
Ta=100 0.85
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA * 59 /W
* : Surface Mounted on 1 1 Board, t 300 sec.
PIN CONNECTION (TOP VIEW) S1 S2
G1 1 6 D1
G1 G2
S2 2 5 S1
G2 3 4 D2
D1 D2
2005. 11. 23 Revision No : 0 1/5
KMA2D7DP20X
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V
VDS=-20V, VGS=0V - - -1
Drain Cut-off Current IDSS A
VDS=-16V, VGS=0V, Tj=70 (Note 3) - - -5
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.6 - - V
Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 100 nA
VGS=-4.5V, ID=-2.7A (Note 2) - 80 100
Drain-Source ON Resistance RDS(ON) m
VGS=-2.5V, ID=-2.0A (Note 2) - 140 175
On-State Drain Current ID(ON) VGS=-4.5V, VDS=-5V (Note 2) -8 - - A
Forward Transconductance gfs VDS=-5V, ID=-2.7A (Note 2) - 4 - S
Dynamic (Note 3)
Total Gate Charge Qg VDS=-10V, RL=3.7 - 5.9 -
Gate-Source Charge Qgs VGS=-4.5V - 1 - nC
Gate-Drain Charge Qgd (Fig.1) - 2 -
Turn-on Delay time td(on) - 22 -
VDS=-10V, RL=3.7
Turn-on Rise time tr - 10 -
VGS=-4.5V RG=6 ns
Turn-off Delay time td(off) - 20 -
(Fig.2)
Turn-off Fall time tf - 40 -
Source-Drain Diode Ratings
Continuous Source Current IS VGS < Vth (Note 1) - - -0.6 A
Diode Forward Voltage VSD IS=-2.7A, VGS=0V (Note 2) - - -1.3 V
Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1 1 PCB Board.
Note 2) Pulse test : Pulse width 300 .
Note 3) Guaranteed by design, not subject to production testing.
2005. 11. 23 Revision No : 0 2/5
KMA2D7DP20X
ID - VDS ID - VGS
-8 -8
-5V -3V
-4.5V Tj=25 C
-4V
Drain Current ID (A)
Drain Current ID (A)
Tj= -55 C
-6 -6
-3.5V
Tj=125 C
-2.5V
-4 -4
-2V
-2 -2
VGS = -1.5V
0 0
0 -0.5 -1 -1.5 -2 -2.5 -3
0 -1 -2 -3 -4 -5
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj RDS(ON) - ID
0.4 0.3
Normalized Threshold Voltage Vth
ID= -250