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BUF460AV

NPN TRANSISTOR POWER MODULE
s EASY TO DRIVE TECHNOLOGY (ETD)
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
V CEV Collector-Emitter Voltage (VBE = -5 V) 1000 V
V CEO(sus) Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 80 A
I CM Collector Peak Current (tp = 10 ms) 160 A
IB Base Current 18 A
I BM Base Peak Current (tp = 10 ms) 27 A
o
P tot T otal Dissipation at Tc = 25 C 270 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max O peration Junction Temperature 150 C
V ISO Insulation W ithstand Voltage (AC-RMS) 2500 V

July 1997 1/7
BUF460AV

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 0.41 C/W
R thc -h Thermal Resistance Case-heats ink With Conductive
o
Grease Applied Max 0.05 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CER Collector Cut-off V CE = V CEV 0.2 mA
o
Current (R BE = 5 ) V CE = V CEV T j = 100 C 2 mA
I CEV Collector Cut-off V CE = V CEV 0.2 mA
o
Current (V BE = -1.5V) V CE = V CEV T j = 100 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(SUS) * Collector-Emitter I C = 0.2 A L = 25 mH 450 V
Sustaining Voltage V c la mp = 450 V
hFE DC Current G ain I C = 60 A V CE = 5 V 15
V CE(sat ) Collector-Emitter IC = 30 A IB = 3A 0.35 V
o
Saturation Voltage IC = 30 A IB = 3 A Tj = 100 C 2 V
IC = 60 A IB = 12 A 0.5 V
o
IC = 60 A IB = 12 A T j = 100 C 2 V
V BE(s at) Base-Emitter I C = 60 A I B = 12 A 1.1 V
o
Saturation Voltage I C = 60 A I B = 12 A T j = 100 C 1.5 V
di C /dt Rate of Rise of V CC = 300 V R C = 0 tp = 3