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SEMICONDUCTOR KHB1D0N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB1D0N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K
avalanche characteristics. It is mainly suitable for electronic ballast and D L
DIM MILLIMETERS
C A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
FEATURES G 0.96 MAX
H 0.90 MAX
VDSS= 600V, ID= 1.0A H
J J _
1.80 + 0.20
E
K _
2.30 + 0.10
Drain-Source ON Resistance : G N
_
L 0.50 + 0.10
RDS(ON)=12 (Max), @VGS = 10V F F M M _
0.50 + 0.10
N 0.70 MIN
Qg(typ.) = 4.5nC O 0.1 MAX
1 2 3
1. GATE
2. DRAIN
3. SOURCE
O
MAXIMUM RATING (Ta=25 )
RATING DPAK (1)
CHARACTERISTIC SYMBOL UNIT
KHB1D0N60D KHB1D0N60I
KHB1D0N60I
Drain-Source Voltage VDSS 600 V
A H
Gate-Source Voltage VGSS 30 V C J
D
@TC=25 1.0 1.0*
ID
Drain Current @TC=100 0.60 0.60* A
B
DIM MILLIMETERS
A _
6.6 + 0.2
Pulsed (Note1) IDP 3.0 3.0* B _
6.1 + 0.2
M
K
C _
5.34 + 0.3
Single Pulsed Avalanche Energy EAS P
63 mJ D _
0.7 + 0.2
(Note 2) N
E _
9.3 +0.3
E
Repetitive Avalanche Energy EAR F _
2.3 + 0.2
2.8 mJ
(Note 1) G _
0.76 + 0.1
G _
Peak Diode Recovery dv/dt H 2.3 + 0.1
dv/dt 5.5 V/ns L J _
0.5 + 0.1
(Note 3) F F
K _
1.8 + 0.2
Drain Power Ta=25 28 28 W L _
0.5 + 0.1
PD M _
1.0 + 0.1
Dissipation Derate above 25 0.22 0.22 W/ 1 2 3 N 0.96 MAX
P _
1.02 + 0.3
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 4.53 4.53 /W
IPAK(1)
Thermal Resistance, Case-to-Sink RthCS 50 50 /W
Thermal Resistance, Junction-to- D
RthJA 110 110 /W
Ambient
* : Drain current limited by maximum junction temperature.
G
S
2007. 3. 26 Revision No : 3 1/6
KHB1D0N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 9.5 12
Dynamic
Total Gate Charge Qg - 5.9 7.7
VDS=480V, ID=1.0A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.7 -
Turn-on Delay time td(on) - 10 30
VDD=300V
Turn-on Rise time tr - 20 50
ID=1.0A ns
Turn-off Delay time td(off) - 16 45
RG=25 (Note4,5)
Turn-off Fall time tf - 25 60
Input Capacitance Ciss - 155 200
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 20 26 pF
Reverse Transfer Capacitance Crss - 3.0 4.0
Source-Drain Diode Ratings
Continuous Source Current IS - - 1.0
VGS Pulsed Source Current ISP - - 3.0
Diode Forward Voltage VSD IS= 1.0A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS= 1.0A, VGS=0V, - 180 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 0.5 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =115mH, IS=1.0A, VDD=50V, RG = 25 , Starting Tj=25 .
Note 3) IS 1.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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