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Philips Semiconductors Product specification

PowerMOS transistor BUK472-60A/B
Isolated version of BUK452-60A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK472 -60A -60B
The device is intended for use in VDS Drain-source voltage 60 60 V
Switched Mode Power Supplies ID Drain current (DC) 10 9.2 A
(SMPS), motor control, welding, Ptot Total power dissipation 22 22 W
DC/DC and AC/DC converters, and Tj Junction temperature 150 150