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DISCRETE SEMICONDUCTORS
DATA SHEET
BSN254
BSN254A
N-channel enhancement mode
vertical D-MOS transistors
Product specification April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors Product specification
N-channel enhancement mode vertical BSN254
D-MOS transistors BSN254A
DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode Drain-source voltage VDS max. 250 V
vertical D-MOS transistors in TO-92 Drain current (DC) ID max. 300 mA
variant envelope and designed for
Total power dissipation up to Tamb = 25