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CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

40V, 6.1A, RDS(ON) = 32m @VGS = 10V.
RDS(ON) = 46m @VGS = 4.5V.

-40V, -5.2A, RDS(ON) = 43m @VGS = 10V.
RDS(ON) = 65m @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2
8 7 6 5
High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Channel 1 Channel 2 Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS