Text preview for : stbv45.pdf part of ST stbv45 . Electronic Components Datasheets Active components Transistors ST stbv45.pdf
Back to : stbv45.pdf | Home
STBV45
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps (CFLs)
SMPS for battery charger TO-92 TO-92AP
Description
Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV45G and STBV45G-AP are supplied
using halogen-free molding compound.
Table 1. Device summary
Order codes Marking Package Packaging
STBV45 BV45 TO-92 Bulk
STBV45G BV45G TO-92 Bulk
STBV45-AP BV45 TO-92AP Ammopack
STBV45G-AP BV45G TO-92AP Ammopack
October 2008 Rev 6 1/10
www.st.com 10
Electrical ratings STBV45
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 0.75 A
ICM Collector peak current (tP < 5 ms) 1.5 A
IB Base current 0.4 A
IBM Base peak current (tP < 5 ms) 0.75 A
PTOT Total dissipation at Tc = 25