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SEMICONDUCTOR KHB3D0N70P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
VDSS= 700V, ID= 3A
Drain-Source ON Resistance
: RDS(ON)= 3.5 @VGS = 10V
Qg(typ.) = 20.5nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KHB3D0N70P KHB3D0N70F
Drain-Source Voltage VDSS 700 V
KHB3D0N70F
Gate-Source Voltage VGSS 30 V
A C
@TC=25 ID 3.0 3.0*
Drain Current A F
O
Pulsed (Note1) IDP 12 12*
E
Single Pulsed Avalanche Energy B DIM MILLIMETERS
EAS 345 mJ G A _
10.16 + 0.2
(Note 2) B _
15.87 + 0.2
Repetitive Avalanche Energy P C _
2.54 + 0.2
EAR 8.0 mJ D _
0.8 + 0.1
(Note 1) _
E 3.18 + 0.1
Peak Diode Recovery dv/dt K F _
3.3 + 0.1
dv/dt 4.0 V/ns _
(Note 3) G 12.57 + 0.2
L H _
0.5 + 0.1
Q
Drain Power Tc=25 113 50 W J J 13.0 MAX
PD K _
3.23 + 0.1
Dissipation Derate above25 0.91 0.34 W/ D L 1.47 MAX
M _
2.54 + 0.2
Maximum Junction Temperature Tj 150 N _
4.7 + 0.2
M M H
O _
6.68 + 0.2
Storage Temperature Range Tstg -55 150 P 6.5
Q _
2.76 + 0.2
Thermal Characteristics N 1 2 3 1. GATE
2. DRAIN
Thermal Resistance, Junction-to-Case RthJC 1.1 2.5 /W 3. SOURCE
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature. TO-220IS
D
G
S
2008. 3. 18 Revision No : 2 1/7
KHB3D0N70P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 700 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 1 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=700V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 3.0 3.5
Dynamic
Total Gate Charge Qg - 20.5 25.6
VDS=560V, ID=3.0A
Gate-Source Charge Qgs - 3 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 10.5 -
Turn-on Delay time td(on) - 11.5 33
Turn-on Rise time tr VDD=350V, RG=25 - 48.5 107
ns
Turn-off Delay time td(off) ID=3.0A (Note4, 5) - 50 110
Turn-off Fall time tf - 57.5 125
Input Capacitance Ciss - 642 835
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 67.2 87.4 pF
Reverse Transfer Capacitance Crss - 10.2 13.3
Source-Drain Diode Ratings
Continuous Source Current IS - - 3.0
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=3.0A, VGS=0V - - 1.6 V
Reverse Recovery Time trr IS=3.0A, VDD=350V, - 730 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s (Note 4) - 3.2 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =71mH, IS=3.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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