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DISCRETE SEMICONDUCTORS

DATA SHEET

BFR92
NPN 5 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

DESCRIPTION PINNING
NPN transistor in a plastic SOT23 PIN DESCRIPTION
envelope primarily intended for use in
Code: P1p fpage 3
RF wideband amplifiers and
oscillators. The transistor features 1 base
low intermodulation distortion and 2 emitter
high power gain; due to its very high 3 collector
transition frequency, it also has 1 2
excellent wideband properties and Top view MSB003
low noise up to high frequencies.
PNP complement is BFT92.
Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base - 15 V
IC DC collector current - 25 mA
Ptot total power dissipation up to Ts = 95