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2SA1012(PNP)
TO-220 Transistor
1. BASE TO-220
2. COLLECTOTR
3. EMITTER
3
2
Features 1
HIGH CURRENT SWITCHING APPLICATIONS.
Low Collector Saturation Voltage
: VCE(SAT) = - 0.4V(MAX) at IC= - 3A
High Speed Swithing Time : tstg = 1.0us (Typ.)
Complementary to 2SC2562
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -5 A
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A
DC current gain hFE(1) VCE=-1V, IC=-1A 70 240
hFE(2) * VCE=-1V, IC=-3A 30
Collector-emitter saturation voltage VCE(sat) * IC=-3A, IB=150mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(SAT) IC=-3A, IB=150mA -0.9 -1.2 V
Transition frequency fT VCE=-4V, IC=-1A 60 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 170 pF
Turn-on Time ton 0.1
Switching VCC=-30V,IC=-3A,
Storage Time tstg 1.0 us
time IB1=-IB2=-0.15A
Fall Time tf 0.1
*Pulse test: tp300S, 0.02.
CLASSIFICATION OF hFE
Rank O Y
Range 70-140 120-240
2SA1012(PNP)
TO-220 Transistor
Typical Characteristics
2SA1012(PNP)
TO-220 Transistor