am1214,175.pdf part of ST am1214,175 am1214,175.pdf, . Electronic Components Datasheets Active components Transistors ST am1214,175.pdf text manual preview

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AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
3:1 VSWR CAPABILITY

.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 160 W MIN. WITH 7.3 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE BRANDING
AM1214-175 1214-175

DESCRIPTION PIN CONNECTION

The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1214-175 is supplied in the BIGPACTM Her-
1. Collector 3. Emitter
metic M etal/Ceramic package with i nternal
Input/Output matching structures. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (T case = 25