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SEMICONDUCTOR KTX102E
TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
B
FEATURES B1
Including two devices in TES6.
(Thin Extreme Super mini type with 6 Pin.)
1 6 DIM MILLIMETERS
C
Simplify circuit design. A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
Reduce a quantity of parts and manufacturing process. 2 5 _
C
B 1.6 + 0.05
B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
EQUIVALENT CIRCUIT (TOP VIEW) P P
P 5
6 5 4
MARKING
H
6 5 4
J
Lot No.
Q1 1. Q 1 EMITTER
D4
Q2
Type Name 2. Q 1 BASE
3. Q 2 BASE
4. Q 2 COLLECTOR
5. Q 2 EMITTER
6. Q 1 COLLECTOR
1 2 3
1 2 3
TES6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150
Base Current IB -30
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150
Base Current IB 30
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 1 1/5
KTX102E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4.0 7.0
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10
Note) hFE Classification : Y(4)120~240, GR(6)200~400
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2.0 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note) hFE Classification : Y(4)120~240, GR(6)200~400
2008. 9. 23 Revision No : 1 2/5
KTX102E
Q 1 (PNP TRANSISTOR)
I C - VCE h FE - I C
-240 3k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I B =-2.0mA
Ta=25 C COMMON EMITTER
-200
DC CURRENT GAIN h FE
I B =-1.5mA
1k
-160
I B =-1.0mA 500
-120 300 Ta=100 C VCE =-6V
I B =-0.5mA Ta=25 C
-80
Ta=-25 C
I B =-0.2mA 100 VCE =-1V
-40
50
I B =0mA
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
-1 -10
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
-0.5 I C /I B =10 -5 I C/I B=10
Ta=25 C
VOLTAGE V BE(sat) (V)
VOLTAGE VCE(sat) (V)
-0.3 -3
C
-0.1 00 -1
=1
Ta
-0.05 -0.5
-0.03 Ta=25 C
-0.3
Ta=-25 C
-0.01 -0.1
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
f T - IC I B - VBE
3k -1k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
VCE =-10V
Ta=25 C -300 VCE =-6V
1k
BASE CURRENT IB (