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STT4PF20V
P-CHANNEL 20V - 0.090 - 3A SOT23-6L
2.7V-DRIVE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
< 0.11 ( @ 4.5 V )
STT4PF20V 20 V 3A
< 0.135 ( @ 2.7 V )
s TYPICAL RDS(on) = 0.090 @ 4.5 V
s TYPICAL RDS(on) = 0.100 @ 2.7 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s STANDARD OUTLINE FOR EASY
s)
AUTOMATED SURFACE MOUNT ASSEMBLY
SOT23-6L
t(
uc
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
d
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAMP ro
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
le te
APPLICATIONS
so
Ob
s MOBILE PHONE APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
-
(s)
EQUIPMENT
ct
o du
e Pr
o let
O bs
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Drain-source Voltage (VGS = 0)
Value
20
Unit
V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage