Text preview for : cep16n10_ceb16n10.pdf part of CET cep16n10 ceb16n10 . Electronic Components Datasheets Active components Transistors CET cep16n10_ceb16n10.pdf
Back to : cep16n10_ceb16n10.pdf | Home
CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120m @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. D
TO-220 & TO-263 package.
D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS