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STP50N06
STP50N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STP50N06 60 V < 0.028 50 A
STP50N06FI 60 V < 0.028 27 A

s TYPICAL RDS(on) = 0.022
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2 2
1 1
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED TO-220 ISOWATT220
CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP50N06 STP50N06FI
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage