Text preview for : buk102-50gs_1.pdf part of Philips buk102-50gs 1 . Electronic Components Datasheets Active components Transistors Philips buk102-50gs_1.pdf
Back to : buk102-50gs_1.pdf | Home
Philips Semiconductors Product specification
PowerMOS transistor BUK102-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V
as a general purpose switch for ID Continuous drain current 50 A
automotive systems and other PD Total power dissipation 125 W
applications. Tj Continuous junction temperature 150
