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STY140NS10
N-CHANNEL 100V - 0.009 - 140A MAX247TM
MESH OVERLAYTM POWER MOSFET

TYPE VDSS RDS(on) ID

STY140NS10 100V <0.011 140A
s TYPICAL RDS(on) = 0.009
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an advanced 3
family of power MOSFETs with outstanding 2
performances. The new patent pending strip layout 1
coupled with the Company's proprietary edge termination
structure, gives the lowest RDS(on) per area, Max247TM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.

INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED

s SWITCH MODE POWER SUPPLY (SMPS)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage