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MMBT3906
General Purpose Transistor COLLECTOR
3
3
PNP Silicon 1 1
BASE
P b Lead(Pb)-Free 2
2 SOT-23
EMITTER
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current-Continuous IC -200 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) 225 mW
TA=25 C PD
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R JA 556 C/W
Total Device Dissipation 300 mW
Alumina Substrate, (2) TA=25 C PD
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient R JA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBT3906=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC=-10