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STD7NS20
STD7NS20-1
N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK
MESH OVERLAYTM MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STD7NS20 200 V < 0.40 7A
STD7NS20-1 200 V < 0.40 7A
s TYPICAL RDS(on) = 0.35
3 3
s EXTREMELY HIGH dv/dt CAPABILITY 2
1
s 100% AVALANCHE TESTED 1

s VERY LOW INTRINSIC CAPACITANCES
s ADD SUFFIX "T4" FOR ORDERING IN TAPE & DPAK IPAK
REEL TO-252 TO-251

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou- INTERNAL SCHEMATIC DIAGRAM
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage