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TIP110/112
TIP115/117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL 3
EQUIPMENT 2
1
DESCRIPTION
The TIP110 and TIP112 are silicon epitaxial-base TO-220
NPN transistors in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package.They are intented for use in medium
power linear and switching applications.
The complementary PNP types are TIP115 and
TIP117. INTERNAL SCHEMATIC DIAGRAM
R 1 Typ.= 7K R2 Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP110 TIP112
PNP TIP115 TIP117
V CBO Collector-Base Volta ge (I E = 0) 60 100 V
V CEO Collector-Emitte r Voltage (I B = 0) 60 100 V
VEBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 2 A
I CM Collector Peak Current 4 A
IB Base Current 50 A
Total Dissipation at T case 25 o C 50 W
P tot
T amb 25 o C 2 W
o
T st g Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
* For PNP types voltage and current values are negative
September 1997 1/6
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 2.5 C/W
o
Rt hj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Collecto r Cut-of f VCE = Half Rated VCEO
ICEO 2 mA
Current (I B = 0)
Collecto r Cut-of f VCB = Half Rated VCBO
ICBO 1 mA
Current (I E = 0)
Emitter Cut-off Current VEB = 5 V
I EBO 2 mA
(I C = 0)
Collecto r-Emitter I C = 30 mA
V CEO(su s) Sustaining Voltage for TIP110/115 60 V
(I B = 0) for TIP112/117 100
Collecto r-Emitter IC = 2 A I B = 8 mA V
V CE(sat ) 2. 5
Saturation Voltage V
VBE Base-Emitter Volta ge IC = 2 A VCE = 4 V 2. 8 V
DC Current Gain IC = 1 A VCE = 4 V 500
hFE
IC = 2 A VCE = 4 V 100 0
For PNP types voltage and current values are negative.
Safe Operating Areas Derating Curve
2/6
TIP110/TIP112/TIP115/TIP117
DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type)
3/6
TIP110/TIP112/TIP115/TIP117
Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types)
4/6
TIP110/TIP112/TIP115/TIP117
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
5/6
TIP110/TIP112/TIP115/TIP117
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.