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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT211

GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited
for high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 850 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Tmb 25