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Philips Semiconductors 1880 MHz PA Driver with BFG21W

1880 MHz PA Driver with BFG21W

Application Note
JL-9901v0

Author

Jarek Lucek

April 9, 1999

Discrete Semiconductors - Mansfield
171 Forbes Blvd.
Mansfield, MA 02048

Abstract
th
BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in
AMPS, TDMA, CDMA and GSM systems. BFG21W's performance is superior at 1880 MHz, 3.6V applications.
Under CW mode, the part is capable of P1dB=24dBm, efficiency of over 50% and typical Gp of 12 dB. BFG21W
delivers 23.5 dBm of linear output power under TDMA with a typical G of 12 dB and efficiency of above 45%.
p
Under CDMA mode, BFG21W delivers 21 dBm of linear output power with a typical G of above 12 dB and
p
efficiency of 40%.
Philips Semiconductors 1880 MHz PA Driver with BFG21W

INTRODUCTION

BFG21W is Philips Semiconductors' 5th generation silicon bipolar RF wideband transistor in a
SOT343R plastic SMD package. The transistor delivers superior performance at frequencies below 3
GHz. It is manufactured according to the double poly process and characterized by a high transition
frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes describes BFG21W
performance at 1880 MHz operation under CW, 2 Tone, TDMA and CDMA conditions.

PERFORMANCE OVERVIEW

The table below summarizes BFG21W's typical performance capabilities under different signal
conditions.

P1dB or Plinear* Gain** Efficiency***
System Vsupply
dBm dB %
Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA

3.0 Volts 22 22 12 12 56 56
CW 3.6 Volts 24 24 12 12 52 52
3.0 Volts 18 18 12.5 12.5 30 30
2Tone 3.6 Volts 19.5 19 12.5 13 35 30
3.0 Volts 21 21 11.5 12 45 45
TDMA 3.6 Volts 23.5 23.5 11.5 12 49 50
3.0 Volts 19 19 12.5 12.5 39 40
CDMA 3.6 Volts 21 21 12.5 13 42 39
Table 1: BFG21W 1880 MHz PA driver performance summary

*- CW - load power @ P1dB
2Tone - load power represents linear average power @ IMD levels reaching