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CEP83A3G/CEB83A3G
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

30V, 102A, RDS(ON) = 4.2 m @VGS = 10V.

RDS(ON) = 6.2 m @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D
Lead free product is acquired.
TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220
S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS