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CES2313
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -3.6A, RDS(ON) = 60m @VGS = -10V.
RDS(ON) = 90m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead free product is acquired.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS