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2SC2482
TO-92MOD Transistor (NPN)
TO-92MOD
1 1. EMITTER 5.800
6.200
2 2. COLLECTOR
3
3. BASE
8.400
8.800
Features
0.900
1.100
0.400
0.600
High voltage :Vceo=300V
13.800
Small collector output capacitance: Cob=3.0pF(Typ) 14.200
1.500 TYP
2.900
3.100
0.000 1.600
0.380
MAXIMUM RATINGS (TA=25 unless otherwise noted)
0.400 4.700
0.500 5.100
Symbol Parameter Value Units
1.730
VCBO Collector-Base Voltage 300 V 2.030
4.000
VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 3mA ,IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A,IC=0 7 V
Collector cut-off current ICBO VCB= 240 V, IE=0 1.0 A
Collector cut-off current ICEO VCB= 220 V, IB=0 5.0 A
Emitter cut-off current IEBO VEB= 7V, IC=0 1.0 A
DC current gain hFE VCE=10V, IC=20mA 30 150
Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB=1mA 1.0 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.0 V
Transition frequency fT VCE=10V, IC=20mA,f=30MHz 50 MHz
Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 3 pF
CLASSIFICATION OF hFE
Rank O Y
Range 30-90 90-150
2SC2482
TO-92MOD Transistor (NPN)
Typical characteristics
2SC2482
TO-92MOD Transistor (NPN)