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KSD5018 NPN SILICON DARLINGTON TRANSISTOR

HIGH VOLTAGE POWER DARLINGTON TR
TO-220
BUILT-IN RESISTOR BETWEEN BASE AND
EMITTER FOR MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage VCBO 600 V
Collector Emitter Voltage VCEO 275 V
Emitter Base Voltage VEBO 10 V
Collector Current (DC) IC 4 A
*Collector Current (Pulse) IC 6 A
1.Base 2.Collector 3.Emitter
Base Current (DC) IB 0.5 A
Collector Dissipation ( T C=25) PC 40 W
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150
ELECTRICAL CHARACTERISTICS (Tc =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage VCEO (sus) IC = 1.5A, IB = 0.05A, L = 25mH 275 V
Collector Emitter Voltage VCER IC = 1mA, RBE = 330