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SEMICONDUCTOR KF70N06P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF70N06P
It's mainly suitable for low viltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
FEATURES Q C 1.3+0.1/-0.05
VDSS= 60V, ID= 70A (KF70N06P) I D _
0.8 + 0.1
E _
3.6 + 0.2
Drain-Source ON Resistance : K _
P F 2.8 + 0.1
RDS(ON)=12m (Max.) @VGS = 10V M G 3.7
L
H 0.5+0.1/-0.05
J I 1.5
D J _
13.08 + 0.3
N N H K 1.46
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) _
L 1.4 + 0.1
M _
1.27 + 0.1
RATING
CHARACTERISTIC SYMBOL UNIT N _
2.54 + 0.2
KF70N06P KF70N06F O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
Drain-Source Voltage VDSS 60 V 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Gate-Source Voltage VGSS 20 V
@TC=25 70 41
I D* TO-220AB
Drain Current @TC=100 44 25 A
Pulsed (Note1) IDP 240 196
KF70N06F
Single Pulsed Avalanche Energy EAS 480 mJ C
(Note 2) A
Repetitive Avalanche Energy EAR 12 mJ F
(Note 1)
O
Peak Diode Recovery dv/dt E DIM MILLIMETERS
dv/dt 4.5 V/ns
B
(Note 3) A _
10.16 + 0.2
G
B _
15.87 + 0.2
Drain Power Tc=25 125 43 W C _
2.54 + 0.2
PD _
Dissipation Derate above 25 1.0 0.34 W/ D 0.8 + 0.1
E _
3.18 + 0.1
K
Maximum Junction Temperature Tj 150 F _
3.3 + 0.1
G _
12.57 + 0.2
L M
Storage Temperature Range Tstg -55~150 R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Thermal Characteristics K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Resistance, Junction-to-Case RthJC 1.0 2.9 /W M 1.47 MAX
N N H
N _
2.54 + 0.2
Thermal Resistance,
RthJA 62.5 /W O _
6.68 + 0.2
Junction-to-Ambient Q _
4.7 + 0.2
1. GATE
R _
2.76 + 0.2
* : Drain current limited by maximum junction temperature. 1 2 3 2. DRAIN
Q
3. SOURCE
PIN CONNECTION
D
TO-220IS (1)
G
S
2010. 7. 14 Revision No : 1 1/7
KF70N06P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.08 - V/
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=35A - 10.0 12.0 m
Dynamic
Total Gate Charge Qg - 51 -
VDS=48V, ID=70A
Gate-Source Charge Qgs - 11.3 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 21.7 -
Turn-on Delay time td(on) - 38 -
VDD=30V
Turn-on Rise time tr - 110 -
RL=0.43 ns
Turn-off Delay time td(off) - 90 -
RG=25 (Note4,5)
Turn-off Fall time tf - 72 -
Input Capacitance Ciss - 2140 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 546 - pF
Reverse Transfer Capacitance Crss - 96.8 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 70
VGS Pulsed Source Current ISP - - 280
Diode Forward Voltage VSD IS=70A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=70A, VGS=0V, - 80 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 280 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =47 H, IS=70A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1 1
KF70N06 KF70N06
P 701 2 F 713 2
1 PRODUCT NAME
2 LOT NO
2010. 7. 14 Revision No :1 2/7
KF70N06P/F
Fig1. ID - VDS Fig2. ID - VGS
1000 1000
VDS = 15V
Drain Current ID (A)
Drain Current ID (A)
VGS=10V
VGS=8V
100 100
VGS=6V
100 C
25 C
10 10
VGS=5V
1 1
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 16
VGS = 0V
On - Resistance RDS(ON) (m)
IDS = 250 14
1.1
12
VGS=10V
1.0 10
VGS=15V
8
0.9
6
0.8 4
-100 -50 0 50 100 150 175 0 10 20 30 40 50 60 70 80
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
100 1.8
Reverse Drain Current IS (A)
VGS =10V
1.6
Normalized On Resistance
ID = 35A
100 C 25 C
1.4
10 1.2
1.0
0.8
1 0.6
0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2010. 7. 14 Revision No :1 3/7
KF70N06P/F
Fig 7. C - VDS Fig 8. Qg - VDS
10000 10
Gate - Source Voltage VGS (V)
Ciss
8
Capacitance (pF)
1000
Coss 6
VDS=48V
Crss 4
100
2
10 0
0 5 10 15 20 25 30 35 40 0 20 40 60
Drain - Source Voltage VDS (V) Gate - Charge Qg (nC)
Fig 9. Safe Operation Area Fig 10. Safe Operation Area
(KF70N06P) (KF70N06F)
100