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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Ths 25