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SMG2302N
3.4 A, 20 V, RDS(ON) 76 m
Elektronische Bauelemente N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
SC-59
Cell Density trench process to provide Low RDS(on) and to A
ensure minimal power loss and heat dissipation. Typical L
3
applications are 3
Top View C B
1
1
FEATURES K E
2
2
Low RDS(on) provides higher efficiency and extends
battery life. D
Low thermal impedance copper lead frame SC-59
F G H J
saves board space.
Fast switching speed.
High performance trench technology.
Millimeter Millimeter
REF. REF.
Application A
Min.
2.70
Max.
3.10 G
Min. Max.
0.10 REF.
B 2.25 3.00 H 0.40 REF.
DC-DC converters and power management in portable C 1.30 1.70 J 0.10 0.20
and battery-powered products such as computers, printers, D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
PCMCIA cards, cellular and cordless telephones. F 0.35 0.50
PACKAGE INFORMATION
Package MPQ LeaderSize
SC-59 3K 7' inch
ABSOLUTE MAXIMUM RATINGS (TA=25