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TC7320
Six Pair, N- and P-Channel
Enhancement-Mode MOSFET
Features General Description
Six N- and P-channel MOSFET pairs The Supertex TC7320 consists of a six pairs of high voltage, low
Integrated gate-to-source resistor threshold, N- and P-channel MOSFETs in a 32-lead LQFP package.
Integrated gate-to-source Zener diode All of the MOSFETs have integrated gate-to-source resistors and
gate-to-source Zener diode clamps which are desired for high
Low threshold
voltage pulser applications. This low threshold, enhancement-mode
Low on-resistance
(normally-off), transistor utilizes an advanced lateral DMOS structure
Low input capacitance and Supertex's well-proven silicon-gate manufacturing process. This
Fast switching speeds combination produces a device with the power handling capabilities
Free from secondary breakdown of bipolar transistors and with the high input impedance and positive
Low input and output leakage temperature coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal runaway and
Applications thermally induced secondary breakdown.

High voltage pulsers Supertex's lateral DMOS FETs are ideally suited to a wide range
Amplifiers of switching and amplifying applications where very low threshold
Buffers voltage, high breakdown voltage, high input impedance, low input
Piezoelectric transducer drivers capacitance, and fast switching speeds are desired.
General purpose line drivers
Logic level interfaces

Ordering Information
BVDSS/BVDGS RDS(ON)
32-Lead LQFP
7.00x7.00mm body (max)
Device (V)
1.60mm height (max) ()
0.80mm pitch
N-Channel P-Channel N-Channel P-Channel
TC7320 TC7320FG-G 200 -200 20 20
-G indicates package is RoHS compliant (`Green')

Pin Configuration

Absolute Maximum Ratings 32
1
Parameter Value
32-Lead LQFP (FG)
Drain-to-source voltage BVDSS
Package Marking
Drain-to-gate voltage BVDGS Top Marking
YY = Year Sealed
Operating and storage temperature -55