ktc4376.pdf part of HT Semiconductor ktc4376 ktc4376.pdf, . Electronic Components Datasheets Active components Transistors HT Semiconductor ktc4376.pdf text manual preview

Text preview for : ktc4376.pdf part of HT Semiconductor ktc4376 . Electronic Components Datasheets Active components Transistors HT Semiconductor ktc4376.pdf

Back to : ktc4376.pdf | Home

KTC4376

TRANSISTOR (NPN) SOT-89-3L

FEATURES
Small Flat Package 1. BASE
High Current Application
2. COLLECTOR
Complementary to KTA1664
3. EMITTER

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 800 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=35V,IE=0 100 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
hFE(1) VCE=1V, IC=100mA 100 320
DC current gain
hFE(2) VCE=1V, IC=700mA 35
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=20mA 0.5 V
Base-emitter voltage VBE VCE=1V, IC=10mA 0.5 0.8 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 13 pF
Transition frequency fT VCE=5V,IC=10mA 120 MHz

CLASSIFICATION OF hFE(1)
RANK O Y
RANGE 100