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2SJ315
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV)

2SJ315
DC-DC Converter
Unit: mm

FEATURES
4- Volt gate drive
Low drain-source ON resistance : RDS (ON) = 0.25 (typ.)
High forward transfer admittance : |Yfs| = 3.0 S (typ.)
Low leakage current : IDSS = -100