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SEMICONDUCTOR KHB3D0N90P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB3D0N90P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and B
A _
9.9 + 0.2
B 15.95 MAX
switch mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
M G 3.7
L
0.5+0.1/-0.05
FEATURES J
H
I 1.5
D J _
13.08 + 0.3
VDSS= 900V, ID= 3A H K 1.46
N N
_
1.4 + 0.1
Drain-Source ON Resistance L
_
M 1.27 + 0.1
: RDS(ON)=4.5 @VGS = 10V N _
2.54 + 0.2
O _
4.5 + 0.2
Qg(typ.) = 25nC 1 2 3 1. GATE P _
2.4 + 0.2
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
MAXIMUM RATING (Tc=25 ) TO-220AB
RATING
KHB3D0N90F1
CHARACTERISTIC SYMBOL KHB3D0N90F1 UNIT C
A
KHB3D0N90P1
KHB3D0N90F2
F
O
Drain-Source Voltage VDSS 900 V E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
VGSS _
Gate-Source Voltage 30 V B 15.87 + 0.2
C _
2.54 + 0.2
D _
0.8 + 0.1
@TC=25 ID 3.0 3.0* E _
3.18 + 0.1
Drain Current A
K
F _
3.3 + 0.1
Pulsed (Note1) IDP 12 12* G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
Single Pulsed Avalanche Energy EAS
J J 13.0 MAX
450 mJ _
(Note 2) D
K 3.23 + 0.1
L 1.47 MAX
Repetitive Avalanche Energy EAR M 1.47 MAX
13 mJ N N H
N _
2.54 + 0.2
(Note 1) _
O 6.68 + 0.2
Peak Diode Recovery dv/dt Q _
4.7 + 0.2
dv/dt 4.0 V/ns R _
2.76 + 0.2
(Note 3)
Q
1 2 3
1. GATE
Drain Power Tc=25 130 43 W 2. DRAIN
3. SOURCE
PD
Dissipation Derate above25 1.04 0.34 W/
TO-220IS (1)
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 KHB3D0N90F2
Thermal Characteristics A C
F
S
Thermal Resistance, Junction-to-Case RthJC 0.96 2.9 /W
P
E DIM MILLIMETERS
Thermal Resistance, Junction-to- A _
10.0 + 0.3
B
RthJA 62.5 62.5 /W B _
G
15.0 + 0.3
Ambient C _
2.70 + 0.3
D 0.76+0.09/-0.05
* : Drain current limited by maximum junction temperature. E 3.2 +0.2
_
L L F _
3.0 + 0.3
K
R
G _ 0.3
12.0 +
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
D K _
3.7 + 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _
2.54 + 0.1
P _
6.8 + 0.1
Q _
4.5 + 0.2
R _
2.6 + 0.2
0.5 Typ
Q
1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
2007. 9. 10 Revision No : 0 1/7
KHB3D0N90P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 900 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 1 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=900V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 4.0 4.5
Dynamic
Total Gate Charge Qg - 25 32
VDS=720V, ID=3.0A
Gate-Source Charge Qgs - 4 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 11.5 -
Turn-on Delay time td(on) - 31 72
Turn-on Rise time tr VDD=450V, RG=25 - 65 139
ns
Turn-off Delay time td(off) ID=3.0A (Note4, 5) - 104 218
Turn-off Fall time tf - 127 264
Input Capacitance Ciss - 820 1066
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 63 82 pF
Reverse Transfer Capacitance Crss - 9 12
Source-Drain Diode Ratings
Continuous Source Current IS - - 3.0
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=3.0A, VGS=0V - - 1.6 V
Reverse Recovery Time trr IS=3.0A, VDD=450V, - 510 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s (Note 4) - 2.2 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =94mH, IS=3.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 9. 10 Revision No : 0 2/7
KHB3D0N90P1/F1/F2
ID - VDS ID - VGS
1
10 VGS
VDS = 50V
TOP : 15.0 V 1
10.0 V
10 250