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TPC8405
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U-MOS IV/N Channel U-MOS III)

TPC8405
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications Unit: mm

Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.)
N Channel RDS (ON) = 20 m (typ.)
High forward transfer admittance : P Channel |Yfs| = 12S (typ.)
N Channel |Yfs| = 14S (typ.)
Low leakage current : P Channel IDSS = -10 A (VDS = -30 V)
N Channel IDSS = 10 A (VDS = 30 V)
Enhancement-mode
: P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25