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DISCRETE SEMICONDUCTORS
DATA SHEET
BSP126
N-channel enhancement mode
vertical D-MOS transistor
Product specification April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors Product specification
N-channel enhancement mode vertical
BSP126
D-MOS transistor
DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode Drain-source voltage VDS max. 250 V
vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA
miniature SOT223 envelope and
Total power dissipation up to Tamb = 25