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2SA2018
SOT-523 Transistor(PNP)
1. BASE SOT-523
2. EMITTER
3. COLLECTOR
Features
A collector current is large.
Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA
MARKING: BW
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -15 V
VCEO Collector-Emitter Voltage -12 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.15 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -15 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V
Collector cut-off current ICBO VCB= -15 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=- 6V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC=-10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=-200mA,IB=-10mA -0.25 V
Transition frequency fT VCE=-2V,IC=-10mA, f=100MHz 260 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 6.5 pF
2SA2018
SOT-523 Transistor(PNP)
Typical Characteristics