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MMBT4403
Switching Transistor PNP Silicon COLLECTOR
3
3
1 1
BASE
2
2 SOT-23
EMITTER
M aximum R atings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current-Continuous IC -600 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) 225 mW
TA=25 C PD
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R qJA 556 C/W
Total Device Dissipation 300 mW
Alumina Substrate, (2) TA=25 C PD
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient R qJA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBT4403=2T
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0) V(BR)CBO -40 - Vdc
Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0) V(BR)EBO -5.0 - Vdc
Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc) IBEV - -0.1 uAdc
Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc) ICEX - -0.1 uAdc
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width <300