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SEMICONDUCTOR KRA110M~KRA114M
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
With Built-in Bias Resistors.
A
Simplify Circuit Design. O DIM MILLIMETERS
F
A 3.20 MAX
Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX
C 0.55 MAX
_
G
D 2.40 + 0.15
E 1.27
F 2.30
C _
G 14.00+ 0.50
H 0.60 MAX
EQUIVALENT CIRCUIT J 1.05
E E
K 1.45
L 25
C
J
M 0.80
D
N 0.55 MAX
K
1 2 3 N
R1 O 0.75
L
B
1. EMITTER
2. COLLECTOR
3. BASE
E
TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1998. 7. 8 Revision No : 3 1/4
KRA110M~KRA114M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
DC Current Gain hFE VCE=-5V, IC=-1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA - -0.1 -0.3 V
Transition Frequency fT * VCE=-10V, IC=-5mA - 250 - MHz
KRA110M - 4.7 -
KRA111M - 10 -
Input Resistor KRA112M R1 - 100 - k
KRA113M - 22 -
KRA114M - 47 -
KRA110M - 0.2 -
KRA111M - 0.065 -
Rise
KRA112M tr - 0.4 -
Time
KRA113M - 0.1 -
KRA114M - 0.15 -
KRA110M - 2.0 -
KRA111M VO=-5V - 1.7 -
Switching Storage
KRA112M tstg VIN=-5V - 3.0 - S
Time Time
KRA113M RL=1k - 2.0 -
KRA114M - 1.5 -
KRA110M - 0.3 -
KRA111M - 0.3 -
Fall
KRA112M tf - 1.7 -
Time
KRA113M - 0.8 -
KRA114M - 1.5 -
Note : * Characteristic of Transistor Only.
1998. 7. 8 Revision No : 3 2/4
KRA110M~KRA114M
h FE - I C VCE(sat) - I C
KRA110M KRA110M
COLLECTOR-EMITTER SATURATION
2k -2
I C /IB =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 Ta=100 C -0.5
300 -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03
Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA111M KRA111M
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA112M KRA112M
COLLECTOR-EMITTER SATURATION
2k -2
IC /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C -0.1
100 Ta=-25 C
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
1998. 7. 8 Revision No : 3 3/4
KRA110M~KRA114M
h FE - I C VCE(sat) - I C
KRA113M KRA113M
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
100 Ta=-25 C -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA114M KRA114M
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
Ta=-25 C
VCE =-5V
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
1998. 7. 8 Revision No : 3 4/4